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Circuits, electronics and noise

BJT collector-emitter bias voltage

Voltage across the transistor from collector to emitter, found from the supply minus the drops across the collector and emitter resistors.

Ref
ELN-17
Rev
v1
Field
Circuits, electronics and noise
Result
Vce [V]

Going round the collector side of an NPN stage, the supply is shared between the collector resistor, the transistor and the emitter resistor. Vce = Vcc − Ic Rc − Ie Re, where the emitter current is Ic + Ib. For linear operation Vce should stay above about 0.2 V, and ideally leave half the supply for the signal swing. Below that the transistor saturates and the formulas for gain no longer apply.

Voltage across the transistor from collector to emitter, found from the supply minus the drops across the collector and emitter resistors. Use it to check headroom in the forward-active region.

Calculator

Solve for
V
V
530
A
1e-40.02
A
1e-60.001
Ω
100100,000
Ω
10010,000
  • Drop across the collector resistor4 V
  • Drop across the emitter resistor2.02 V
  • Headroom above saturation (Vce − 0.2 V)5.78 V

What drives the result

Each variable is moved across its typical range while the others stay at the values above. The longest bar is the key driver.

Collector–emitter voltage (V) current value 5.98 V
RcCollector resistorKey driver
−1909.78
IcCollector current
−4811.7
VccSupply voltage
−1.0224
ReEmitter resistor
−12.27.8
IbBase current
56
  • The transistor has 5.98 V from collector to emitter, so it is in the active region with 5.78 V of headroom.
  • The stage is best biased with Vce near half the supply, here 6 V, so the output can swing equally up and down.
Chart data as tables

Ranked variables

VariableTypical rangeLowest resultHighest resultSwing (V)Local stepChange in result
Rc Collector resistor100 to 100,000 Ω−1909.78199.8+10%−6.69 %
Ic Collector current1e-4 to 0.02 A−48.0211.6859.7+10%−10 %
Vcc Supply voltage5 to 30 V−1.0223.9825+10%+20.1 %
Re Emitter resistor100 to 10,000 Ω−12.27.79820+10%−3.38 %
Ib Base current1e-6 to 0.001 A55.9990.999+10%−0.0334 %

Sweep of Collector resistor

Collector resistor (Ω)Collector–emitter voltage (V)
1009.78
237.19.506
562.38.855
1,3347.313
3,1623.655
7,499−5.018
17,780−25.59
42,170−74.36
100,000−190

Sweep one variable

Collector–emitter voltage (V)Hover, touch, or use the arrow keys on the chart
−200−150−100−500 100500200010k50k Collector resistor (Ω), log scale now 5.98

Variables and how each one contributes

Vce

Collector–emitter voltage

Result · V

What the equation gives you. Everything else feeds it.

Vcc

Supply voltage

V · typical 5 to 30

The supply voltage, in V. Raises Vce one for one, as every other quantity is held fixed. Raising it by 10 % (to 13.2) moves the result by +20.1 %, from 5.98 to 7.18 V.

Ic

Collector current

A · typical 1e-4 to 0.02

The collector current, in A. More current increases the drops over Rc and Re, so Vce falls. Raising it by 10 % (to 0.0022) moves the result by −10 %, from 5.98 to 5.38 V.

Ib

Base current

A · typical 1e-6 to 0.001

The base current, in A. Adds to the emitter current, so the drop across Re rises slightly and Vce falls. Raising it by 10 % (to 2.2×10−5) moves the result by −0.0334 %, from 5.98 to 5.978 V.

Rc

Collector resistor

Ω · typical 100 to 100,000

The collector resistor, in Ω. A larger Rc drops more voltage and lowers Vce. Raising it by 10 % (to 2,200) moves the result by −6.69 %, from 5.98 to 5.58 V.

Re

Emitter resistor

Ω · typical 100 to 10,000

The emitter resistor, in Ω. A larger Re drops more voltage and lowers Vce. Raising it by 10 % (to 1,100) moves the result by −3.38 %, from 5.98 to 5.778 V.

Worked example with the values above

  1. Collector drop: Ic Rc = 0.002 × 2,000 = 4 V.
  2. Emitter drop: (Ic + Ib) Re = 0.00202 × 1,000 = 2.02 V.
  3. Vce = 12 − 4 − 2.02 = 5.98 V.

Assumptions and limits

  • An NPN transistor in the forward-active region, with a fixed base–emitter drop of about 0.7 V.
  • Midband small signals, an AC-grounded supply and negligible transistor output conductance.

Common mistakes

  • Forgetting to check that the collector–base junction is still reverse biased.
  • Using the DC current gain where the small-signal gain is needed, or the reverse.
  • Forgetting that an unbypassed emitter resistor adds (β + 1) times its value to the input resistance.

Statistics and uncertainty

The result is a small difference between large numbers, so it is sensitive to the tolerances of the supply and of the resistors. Check the worst case with the supply high and the resistors at their extremes.

Where it is used

  • Setting the operating point of transistor amplifiers and switches.
  • Estimating small-signal gain, input resistance and the effect of emitter degeneration.

Maths you need

  • Thevenin equivalent: a source and a resistance in series
  • Transistor current gain: β = Ic / Ib
  • Thermal voltage: kT/q, about 25 mV at room temperature

Related formulas

Practise this formula